Band gap and effective electron mass of cubic InN

被引：13

作者：

Schley, P. ^{[1
]}

Napierala, C. ^{[1
]}

Goldhahn, R. ^{[1
]}

Gobsch, G. ^{[1
]}

Schoermann, J. ^{[2
]}

As, D. J. ^{[2
]}

Lischka, K. ^{[2
]}

Feneberg, M. ^{[3
]}

Thonke, K. ^{[3
]}

Fuchs, F. ^{[4
]}

Bechstedt, F. ^{[4
]}

机构：

[1] Tech Univ Ilmenau, Inst Phys, PF 100565, D-98684 Ilmenau, Germany

[2] Univ Paderborn, Dept Phys, Paderborn 33098, Germany

[3] Univ Ulm, Inst Semicond Phys, Ulm 89069, Germany

[4] Friedrich Shiller Univ Jena, Inst Solid State Theory & Opt, Jena 07743, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778482

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We succeeded in growing single crystalline c-InN films on 3C-SiC substrate with a c-Ga-N buffer layer by MBE. Spectroscopic ellipsometry is applied in order to determine the complex dielectric function for cubic InN from mid-infrared into the visible spectral region. The high electron densities above 10(19) cm(3) cause pronounced Bursteiu-Moss shifts at the gap. Taking into account the non-parabolicily and the filling of the conduction band, data analysis yields renormalized band edges between 0.430 and 0.455 eV. Including carrier-induced band-gap renormalization we estimate a zero-density band gap of similar to 0.596 eV for c-InN with a corresponding effective electron mass of 0,041 m(0) at the Gamma point of the Brillouin zone.

引用

页码：2342 / +

页数：2

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