Characterization and optimization of a resonant cavity enhanced P-i-N photodiode response

被引：4

作者：

Golubovic, DS ^{[1
]}

Matavulj, PS ^{[1
]}

Radunovic, JB ^{[1
]}

机构：

[1] Univ Belgrade, Fac Elect Engn, YU-11120 Belgrade, Yugoslavia

来源：

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1999年 / 20卷 / 01期

关键词：

bandwidth; linear response; P-i-N photodiode; quantum efficiency; Resonant Cavity Enhanced photodiode;

D O I：

10.1023/A:1021759819446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents linear pulse response of a Resonant Cavity Enhanced (RCE) P-i-N fotodiode, The RCE P-i-N photodiode designed for high-speed aplication is analysed for various submicron thicknesses of absorption layer, bias voltages, active areas and incident pulse optical excitations. The results are obtained by numerical simulation of the complete phenomenological model for two valley semiconductor. Great enhancement bf the quantum efficiency and the product bandwidth-quantum efficiency, Is obvious from obtained results for this photodiode type.

引用

页码：109 / 123

页数：15

共 5 条

[1] Nonlinear pulse response of p-i-n photodiode caused by the change of the bias voltage [J].

Matavulj, PS ;

Gvozdic, DM ;

Radunovic, JB ;

Elazar, JM .

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1996, 17 (09) :1519-1528

[2] The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode [J].

Matavulj, PS ;

Gvozdic, DM ;

Radunovic, JB .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1997, 15 (12) :2270-2277

[3]

NIKOLIC PL, 1997, 21 INT C MICR MIEL 9, V1, P327

[4] Design of a resonant-cavity-enhanced photodetector for high-speed applications [J].

Tung, HH ;

Lee, CP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (05) :753-760

[5] TRANSIENT SIMULATION OF HETEROJUNCTION PHOTODIODES .2. ANALYSIS OF RESONANT-CAVITY ENHANCED PHOTODETECTORS [J].

UNLU, MS ;

ONAT, BM ;

LEBLEBICI, Y .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1995, 13 (03) :406-415

← 1 →