Characterization of Copper Diffusion in Silicon Solar Cells

被引:14
作者
Kraft, Achim [1 ]
Wolf, Christian [1 ]
Bartsch, Jonas [1 ]
Glatthaar, Markus [1 ]
机构
[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany
来源
PROCEEDINGS OF THE FIFTH WORKSHOP ON METALLIZATION FOR CRYSTALLINE SILICON SOLAR CELLS | 2015年 / 67卷
关键词
solar cell metallization; copper; nickel diffusion barrier; long term stability;
D O I
10.1016/j.egypro.2015.03.292
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this work we investigate the degradation behavior of solar cells with a copper front side metallization based on a fine-line screen-printed silver seed-layer, a plated nickel diffusion barrier, a plated copper conductive layer and a silver capping. The results reveal that the cell degradation depends, besides the effectiveness of the nickel diffusion barrier, on the used seed-layer and the firing temperature of the seed-layer. The degradation behavior of cells, produced with different Ag seed-layer pastes resulting in different contact finger geometries after screen-printing and firing, was evaluated. With similar nickel diffusion barrier masses the seed-layer that generates the biggest metallized area at the cell surface shows the fastest degradation. Apart from that, the composition of the seed layer also has an impact on the degradation. The analysis of different firing temperatures shows that higher set-peak temperatures result in faster cell degradation due to copper migration. (C) 2015 The Authors. Published by Elsevier Ltd.
引用
收藏
页码:93 / 100
页数:8
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