Simulation of mode lock lasers using microring resonators integrated with InGaAsP saturable absorbers

被引:6
作者
Amiri, I. S. [1 ,2 ]
Ariannejad, M. M. [3 ]
Ahmad, H. [3 ]
Yupapin, P. [1 ,4 ]
机构
[1] Ton Duc Thang Univ, Dept Management Sci & Technol Dev, Ho Chi Minh City, Vietnam
[2] Ton Duc Thang Univ, Fac Sci Appl, Ho Chi Minh City, Vietnam
[3] Univ Malaya, Photon Res Ctr, Kuala Lumpur 50603, Malaysia
[4] Ton Duc Thang Univ, Fac Elect & Elect Engn, Ho Chi Minh City, Vietnam
关键词
Add-drop microring resonator; Mode lock laser; Saturable absorber (SA); InGaAsP/InP; FIBER LASER; FREQUENCY; TRANSMISSION; GENERATION; PHOTONICS; FILTER;
D O I
10.1007/s12648-017-1039-6
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Add-drop microring resonators (MRRs) are used in a wide variety of practical applications. To add or drop special wavelength division multiplexing, an optical wavelength selective ring resonator can be used. This paper presents a system of multiple mode lock lasers consisting of an add-drop MRR integrated into a smaller ring with a saturable absorber (SA). In the case of mode-locking, a semiconductor is presented as the SA. This study uses an InGaAsP/InP semiconductor with an InP substrate and a direct bandgap as the MRR. The time-domain traveling wave method is utilized to model the presented photonic circuits. The generated multi-wavelength mode lock lasers have a bandwidth and free spectral range (FSR) of 1.1 and 30.24 nm, corresponding to 0.137 and 3.77 THz, respectively. The drop port output signals have a bandwidth and FSR of 1.5 and 30.24 nm, corresponding to 0.187 and 3.77 THz in the frequency domain. A finesse of 20.16 is obtained, and the Q-factor is similar to 1 x 10(3). The side bands of the mode lock lasers have an FSR of 0.86 nm.
引用
收藏
页码:1411 / 1415
页数:5
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