Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

被引：0

作者：

Kim, JH ^{[1
]}

Sanchez, JJ ^{[1
]}

DeMassa, TA ^{[1
]}

Quddus, MT ^{[1
]}

Grondin, RO ^{[1
]}

Liu, CH ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 01期

关键词：

D O I：

10.1016/S0038-1101(98)00196-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：57 / 63

页数：7

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