Effect of Fluoride Ions on Wet Etching of Copper/Molybdenum in Hydrogen Peroxide Solution

Copper metallization is a key issue for high performance thin film transistor technology. Hydrogen peroxide-based copper etchants are widely used in copper metallization. Recently, a hydrogen peroxide-based copper etchant for a copper/molybdenum double layer was investigated for its versatile use in both amorphous silicon TFTs and in metal-oxide TFTs. However, little is known about the etching mechanism for molybdenum and copper in a hydrogen peroxide solution containing fluorine ions. In this paper, it is shown that the amount of fluorine ions in the hydrogen peroxide-based copper etchant plays an important role in controlling the galvanic reaction between the copper and the molybdenum. A new mechanism of molybdenum dissolution in the presence of fluoride ions in 1.5 M hydrogen peroxide solution is suggested. The concentration of the fluoride ions is also important in eliminating the residue of molybdenum after wet patterning.