High-power AlGaInN flip-chip light-emitting diodes

被引:427
作者
Wierer, JJ [1 ]
Steigerwald, DA [1 ]
Krames, MR [1 ]
O'Shea, JJ [1 ]
Ludowise, MJ [1 ]
Christenson, G [1 ]
Shen, YC [1 ]
Lowery, C [1 ]
Martin, PS [1 ]
Subramanya, S [1 ]
Götz, W [1 ]
Gardner, NF [1 ]
Kern, RS [1 ]
Stockman, SA [1 ]
机构
[1] LumiLeds Lighting, San Jose, CA 95131 USA
关键词
D O I
10.1063/1.1374499
中图分类号
O59 [应用物理学];
学科分类号
摘要
Data are presented on high-power AlGaInN flip-chip light-emitting diodes (FCLEDs). The FCLED is "flipped-over" or inverted compared to conventional AlGaInN light-emitting diodes (LEDs), and light is extracted through the transparent sapphire substrate. This avoids light absorption from the semitransparent metal contact in conventional epitaxial-up designs. The power FCLED has a large emitting area (similar to0.70 mm(2)) and an optimized contacting scheme allowing high current (200-1000 mA, J similar to 30-143 A/cm(2)) operation with low forward voltages (similar to2.8 V at 200 mA), and therefore higher power conversion ("wall-plug") efficiencies. The improved extraction efficiency of the FCLED provides 1.6 times more light compared to top-emitting power LEDs and ten times more light than conventional small-area (similar to0.07 mm(2)) LEDs. FCLEDs in the blue wavelength regime (similar to 435 nm peak) exhibit similar to 21% external quantum efficiency and similar to 20% wall-plug efficiency at 200 mA and with record light output powers of 400 mW at 1.0 A. (C) 2001 American Institute of Physics.
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收藏
页码:3379 / 3381
页数:3
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