Surface Modification of Si Wafer by Low-Pressure High-Frequency Plasma Chemical Vapor Deposition Method

被引：3

作者：

Yuji, Toshifumi ^{[1
]}

Mungkung, Narong ^{[2
]}

Kiyota, Yuichi ^{[1
]}

Uesugi, Daishiro ^{[1
]}

Kawano, Minobu ^{[1
]}

Nakabayashi, Kenichi ^{[1
]}

Kataoka, Hisaaki ^{[3
]}

Suzaki, Yoshifumi ^{[4
]}

Kashihara, Nobuki ^{[5
]}

Akatsuka, Hiroshi ^{[6
]}

机构：

[1] Miyazaki Univ, Fac Educ & Culture, Miyazaki 8892192, Japan

[2] King Mongkuts Univ Technol Thonburi, Dept Elect Technol Educ, Bangkok 10140, Thailand

[3] Minami Kyushu Jr Coll, Dept Int Liberal Arts, Miyazaki 8800032, Japan

[4] Kagawa Univ, Dept Adv Mat Sci, Takamatsu, Kagawa 7610396, Japan

[5] ADTEC Plasma Technol Co Ltd, Fukuyama, Hiroshima 7210942, Japan

[6] Tokyo Inst Technol, Nucl Reactors Res Lab, Tokyo 1528550, Japan

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2011年 / 39卷 / 06期

关键词：

Argon plus oxygen mixture gas; MirroTron sputtering method; Poly (ethylene naphthalate) film; solar cell; thin films; SENSITIZED SOLAR-CELLS; SILICON CARBONITRIDE; DISCHARGES; DC; CARBIDE; STATES; FILMS; CVD;

D O I：

10.1109/TPS.2011.2140383

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

In recent years, a flexible type of solar cell that can maintain various shape changes and that is applicable to virtually all products has attracted global attention. In the present research, we describe equipment for the production of thin-film material for flexible type solar cells that uses a high-frequency plasma chemical vapor deposition (CVD) method. This equipment is now at the development stage, and in order to clarify the cardinal trait of the plasma, we performed a plasma treatment on the surface of a Si wafer. Using X-ray photoelectron spectroscopy and contact angle meter measurements, we identified one index that clarifies the simple cardinal trait of plasma CVD.

引用

页码：1427 / 1431

页数：5

共 18 条

[1] Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films [J].