Measuring small differential-mode voltages with high common-mode voltages and fast transients - Application to gate drivers for wide band-gap switches

被引：0

作者：

Geramirad, Hadiseh ^{[1
]}

Morel, Florent ^{[2
]}

Lefebvre, Bruno ^{[2
]}

Vollaire, Christian ^{[3
]}

Breard, Arnaud ^{[4
]}

机构：

[1] Ecole Centrale Lyon, SAS SuperGrid Inst, ITE, Ampere Lab CNRS 5005, Villeurbanne, France

[2] SAS SuperGrid Inst, ITE, Villeurbanne, France

[3] Ecole Centrale Lyon, Ampere Lab CNRS 5005, Ecully, France

[4] Ecole Centrale Lyon, Ampere Lab CNRS 5005, Ecully, France

来源：

PROCEEDINGS OF THE 2020 INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY (EMC EUROPE) | 2020年

关键词：

Common-mode voltage; Wide band-gap semi-conductors; Half-bridge; Silicon carbide; SiC MOSFET; Isolated-probe; Differential probe; Gate-driver; POWER ELECTRONICS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In power electronics, gate-voltage measurement is used to optimize the design of the gate driver. Therefore a proper measurement technique is vital to ensure the proper operation of the electronic device. Measuring a small signal in a high switching voltage environment is a complicated task especially for high-side switches in a half-bridge configuration with fast semiconductor devices where voltage probes are subject to high common-mode voltages with fast transients. Hence, this article compares experimentally the conventional differential probes with optically isolated probes for measuring a small signal (26V) with a 1200V common-mode voltage and high switching rates created by SiC MOSFET (30kV/mu s). The conventional differential probe shows differences of measured voltage amplitude up to 10V compared to optically isolated probe. The experimental results prove that parasitic elements of conventional differential probes change the gate-voltage shape and increase the common-mode current in the experimental set-up up to 6dB.

引用

页数：5