Ferroelectric polymers for non-volatile memory devices: a review

被引：69
作者：
Li, Huilin [2 ,3 ]
Wang, Ruopeng [4 ]
Han, Su-Ting [2 ]
Zhou, Ye [1 ]
机构：
[1] Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Inst Microscale Optoelect, Shenzhen, Peoples R China
[3] Henan Univ, Henan Key Lab Photovolta Mat, Kaifeng, Peoples R China
[4] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen, Peoples R China
来源：
POLYMER INTERNATIONAL | 2020年 / 69卷 / 06期
基金：
中国国家自然科学基金;
关键词：
non-volatile memory; ferroelectric polymer; data storage; artificial synapse; flexible electronics; FIELD-EFFECT TRANSISTOR; MULTILEVEL DATA-STORAGE; POLY(VINYLIDENE FLUORIDE); GATE DIELECTRICS; MOS2; TRANSISTORS; PERFORMANCE; PHASE; FILMS; COPOLYMER; BEHAVIOR;
D O I：
10.1002/pi.5980
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
Ferroelectric memories have attracted great attention for data storage, and ferroelectric polymers have been widely studied with the development of flexible and wearable devices. The multifunctional capabilities, non-volatile memory state, low power consumption, long durability, fast switching, chemical stability and mechanical flexibility make them good candidates for various memories, such as ferroelectric tunnel junctions and diodes, ferroelectric capacitors, resistive memories and field-effect transistors. Here, recent advances in the research of these ferroelectric polymer memories are summarized, and challenges in the development of smart electronics are also discussed. (c) 2020 Society of Chemical Industry
引用
收藏
页码：533 / 544
页数：12
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