Peculiarities of pulsed ion implantation from a laser plasma containing multiply charged ions

A mathematical model describing the dynamics of a pulsed laser plasma with multiply charged ions, as well as the formation of the accelerated ion flow in an external magnetic field, is developed. Experimental studies and mathematical simulation by the particle-in-cell method are used to determine the role of multiply charged ions in the process of ion implantation into a silicon substrate from the pulsed plasma containing singly and doubly charged titanium ions. The plasma spreads between parallel-plate electrodes (Ti target and Si substrate) along the normal to the surface of the target. Ions are accelerated by high-voltage negative pulses applied to the substrate. It is found that doubly charged ions effectively participate in the implantation process when an external electric field is applied very soon after the laser action on the target. The application of a high-voltage pulse with an amplitude of 50 kV 0.5 mu s after a laser pulse leads to ion implantation with an energy close to 100 keV. With increasing delay in the application of the high-voltage pulse, the upper boundary of the energy spectrum of implanted ions is displaced towards lower energies. Comparison of the depth profiles of titanium distribution in silicon calculated from the results of simulation are compared with the experimental profiles shows that the model developed here correctly describes the formation of the high-energy component of the ion flow, which is responsible for defect formation and doping of deep layers of the substrate.