Characterization and modelling of ageing failures on power MOSFET devices

被引：20
作者：
Khong, B.
Legros, M.
Tounsi, P.
Dupuy, Ph.
Chauffleur, X.
Levade, C.
Vanderschaeve, G.
Scheid, E.
机构：
[1] CEMES, CNRS, F-31055 Toulouse 4, France
[2] CNRS, LAAS, F-31077 Toulouse, France
[3] Freescale Semicond, F-31023 Toulouse, France
[4] Epsilon Ingn, F-31674 Labege, France
来源：
MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2007.07.055
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method based on the failure analysis of power MOSFET devices tested under extreme electrothermal fatigue is proposed. Failure modes are associated to several structural changes that have been investigated through acoustic, electron and ion microscopy. The main aging mode is related to the exponential increase in drain resistance due to delamination at the die attach. Earlier failures are observed when very local defects due to electrical over stresses (EOS) occur at the source metallization or at the wire bonding. Aging models were elaborated to account for the die attach delamination, but are still lacking to take in account the structural evolution of the Al metallization. This new methodology, based on accelerated tests and structural observations aims at designing a new generation of power components that will be more reliable. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1735 / 1740
页数：6
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