Structural analysis of epitaxial Si layers grown on porous silicon

被引：0

作者：

Jin, S ^{[1
]}

Bender, H ^{[1
]}

Stalmans, L ^{[1
]}

Poortmans, J ^{[1
]}

Caymax, M ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS | 1999年 / 164期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transmission electron microscopy (TEM) is used to study the microstructural properties of porous silicon layers (PS) and of the epitaxial Si layers grown on top of the PS. A more dense silicon layer exists in the upper part of the porous silicon. The defect density of the epitaxial layers is found to depend strongly on the morphology of the porous Si layers, and on the deposition temperature. A defect-free epi-Si layer with 800nm thickness can be obtained when depositing on a low porosity layer at 725 degreesC.

引用

页码：321 / 324

页数：4

共 8 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].