The CDF SVX II upgrade silicon detector: silicon sensors performances

被引:0
|
作者
Bolla, G [1 ]
机构
[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
关键词
D O I
10.1016/S0168-9002(97)91248-1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A microstrip silicon detector SVX II (The CDF II Technical Design Report, CDF Collaboration, FERMILAB-Pub-96/360-E [1]) has been proposed for the upgrade of CDF to be installed in 1999 for Run II of the Tevatron. Three barrels of live layers of double-sided silicon microstrip detectors will cover the interaction region. Beginning with a description of the project the attention will be focused on the silicon sensors performances. The prototypes studies (D. Bortoletto, Nucl, Inst. and Meth, A 386 (1997) 87 [2]) led to the final choice that is investigated here. Full characterization of the production Hamamatsu sensors is presented including probe station measurements and test beam results before and after irradiation. Analysis of data taken during the CDF beam test at the FNAL Meson Beamline and related S/N, resolution and charge collection measurements are reported. (C) 1998 Elsevier Science B,V. All rights reserved.
引用
收藏
页码:112 / 116
页数:5
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