Unipolar resistive switching characteristics in Co3O4 films

被引：24
作者：
Gao, Xu [1 ,2 ]
Guo, Hongxuan [1 ,3 ]
Xia, Yidong [1 ,3 ]
Yin, Jiang [1 ,3 ]
Liu, Zhiguo [1 ,3 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
来源：
THIN SOLID FILMS | 2010年 / 519卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Resistance random access memory; Resistive switching; Co3O4; film; Pulsed laser deposition; Unipolar switching; Switching mechanism; THIN-FILMS; RESISTANCE; MEMORY; SRTIO3;
D O I：
10.1016/j.tsf.2010.07.075
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Unipolar resistive switching behavior has been investigated in Pt/Co3O4/Pt stacks. The resistance ratio of the high- and low- resistance states is over 5 x 10(3). The "ON/OFF" operation of the memory cells can be repeated more than 200 times at room temperature. The resistance of the two states can be kept for more than 16 h without showing degradation. The temperature dependence of the resistance shows a metallic behavior at the low-resistance state, but a semiconductor-behavior at the high-resistance state. The mechanism responsible for the observed unipolar resistive switching behavior has been discussed. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：450 / 452
页数：3
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