First-principles study of carbon impurity effects in the pseudo-hexagonal Ta2O5

被引：13

作者：

Kim, Ja-Yong ^{[1
,2
]}

Magyari-Kope, Blanka ^{[2
]}

Nishi, Yoshio ^{[2
]}

Ahn, Ji-Hoon ^{[3
]}

机构：

[1] SK Hynix Semicond, Div Res & Dev, San 136-1, Icheon Si 467701, Kyoungki Do, South Korea

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] Korea Maritime & Ocean Univ, Dept Elect Mat Engn, 727 Taejong Ro, Busan 49112, South Korea

来源：

CURRENT APPLIED PHYSICS | 2016年 / 16卷 / 06期

关键词：

Density-functional theory; Resistance random access memory; Ta2O5; Carbon impurity; Oxygen vacancy; HYDROGEN; FILMS; DEVICE;

D O I：

10.1016/j.cap.2016.03.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon-impurity effects on electronic structures and oxygen-vacancy formation stability of Ta2O5 resistive memories are investigated using the density-functional theory. Generalized gradient approximation with on-site Coulomb corrections is employed for the investigation. The unintentionally incorporated carbon can cause unwanted increase in the resistive off-state leakage current by extending the defect state region in the bandgap. The carbon impurities are found to be preferentially located in the neighborhood of the oxygen vacancies, and they reduce the oxygen-vacancy formation energy, which is predicted to have an influence on lowering the forming voltage. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：638 / 643

页数：6

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