Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311)B GaAs with AlAs cap

被引：7

作者：

Lu, X. M. ^{[1
]}

Matsubara, S. ^{[1
]}

Nakagawa, Y. ^{[1
,2
]}

Kitada, T. ^{[1
]}

Isu, T. ^{[1
]}

机构：

[1] Univ Tokushima, Ctr Frontier Res Engn, Inst Sci & Technol, Tokushima 7708506, Japan

[2] Nichia Corp, Anan, Tokushima 7748601, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 425卷

基金：

日本学术振兴会;

关键词：

Photoluminescence; Molecular beam epitaxy; Quantum dots; (311)B GaAs; AlAs cap; 2ND-HARMONIC GENERATION; CARRIER CAPTURE;

D O I：

10.1016/j.jcrysgro.2015.02.074

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-assembled lnAs quantum dots (QDs), without and with an AlAs cap, were grown on (311)B GaAs substrates by molecular beam epitaxy. Surface morphologies of QDs were characterized by atomic force microscopy. Photoluminescence (PL) was performed in the 4-300 K temperature range. For QDs without AlAs cap, sharp and intense PL emitted from wetting layer was observed. PL from QDs was relatively weak at 4 K. The PL intensity of QDs decreased as measurement temperature increased and was not observed at 300 K. For QDs with AlAs cap, PL from WL vanished while PL from QDs were substantially enhanced at 300 K. Suppression of PL from WL indicates that the thickness of WL was reduced due to phase separation result from AlAs cap, which is an effective way to improve the PL of InAs QDs grown on (311)B GaAs substrate. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：106 / 109

页数：4

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