LASER PHOTOACOUSTIC DIAGNOSTICS OF ADVANCED MATERIALS WITH DIFFERENT STRUCTURE AND DIMENSIONS

被引：13

作者：

Burbelo, R. ^{[1
]}

Andrusenko, D. ^{[1
]}

Isaiev, M. ^{[1
]}

Kuzmich, A. ^{[1
]}

机构：

[1] Taras Shevchenko Kyiv Natl Univ, Fac Phys, UA-01601 Kiev, Ukraine

来源：

ARCHIVES OF METALLURGY AND MATERIALS | 2011年 / 56卷 / 04期

关键词：

Advanced Materials; Laser Irradiation; Photoacoustic; SPECTROSCOPY;

D O I：

10.2478/v10172-011-0129-2

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

In the article the results of practical implementation of the PA methods in the study of materials of different structure and dimensions are presented. The features of PA conversion in inhomogeneous semiconductor structures such as porous silicon and doped semiconductor materials are analyzed. To investigate the thermal and elastic properties of porous silicon's based composites gas-microphone and piezoelectric methods registration of PA signal were used. The results of theoretical and experimental investigation of PA conversion in inhomogeneous silicon-based semiconductor structures under their irradiation by short (similar to 10 ns) laser pulse are presented. The influence of thermal parameters distribution of the material structure on the PA signal parameters is shown. Principal possibility of using pulsed radiation for investigation of the modified submicron surface layer is demonstrated.

引用

页码：1157 / 1162

页数：6

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