Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy

被引：11

作者：

Jiang, Yuxuan ^{[1
]}

Asmar, Mahmoud M. ^{[2
]}

Han, Xingyue ^{[2
]}

Ozerov, Mykhalo ^{[1
]}

Smirnov, Dmitry ^{[1
]}

Salehi, Maryam ^{[3
]}

Oh, Seongshik ^{[4
]}

Jiang, Zhigang ^{[5
]}

Tse, Wang-Kong ^{[6
]}

Wu, Liang ^{[2
]}

机构：

[1] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[2] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

[3] Rutgers State Univ, Dept Mat Sci & Engn, Piscataway, NJ 08854 USA

[4] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[5] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[6] Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA

来源：

NANO LETTERS | 2020年 / 20卷 / 06期

基金：

美国国家科学基金会;

关键词：

Topological insulator; electron-hole asymmetry; Landau levels; magneto-infrared spectroscopy; quantum confinement effect; ROTATION; FARADAY;

D O I：

10.1021/acs.nanolett.0c01447

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

When surface states (SSs) form in topological insulators TIs), they inherit the properties of bulk bands, including the electron-hole (e-h) asymmetry but with much more profound impacts. Here via combining magneto-infrared spectroscopy with theoretical analysis, we show that e-h asymmetry significantly modifies the SS electronic structures when interplaying with the quantum confinement effect. Compared with the case without e-h asymmetry, the SSs now bear not only a band asymmetry, such as that in the bulk, but also a shift of the Dirac point relative to the bulk bands and a reduction of the hybridization gap of up to 70%. Our results signify the importance of e-h asymmetry in the band engineering of TIs in the thin-film limit.

引用

页码：4588 / 4593

页数：6

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