Optical properties of silicon carbonitride films produced by plasma-induced decomposition of organic silicon compounds

被引：10

作者：

Fainer, N. I. ^{[1
]}

Nemkova, A. A. ^{[2
]}

机构：

[1] Russian Acad Sci, Nikolaev Inst Inorgan Chem, Siberian Branch, Novosibirsk 630090, Russia

[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

HIGH ENERGY CHEMISTRY | 2015年 / 49卷 / 04期

基金：

美国国家科学基金会; 俄罗斯基础研究基金会;

关键词：

PHASE-COMPOSITION; ELECTRONIC-STRUCTURE; PHOTONICS; NITRIDE; INTEGRATION; DEPOSITION; PLATFORM;

D O I：

10.1134/S0018143915040074

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Optical properties (refractive index; UV, visible, and IR transmission spectra; optical bandgap) of silicon carbonitride SiC (x) N (y) films, promising materials for silicon photonic devices and microelectronics, have been studied. The films have been synthesized by rf plasma-enhanced chemical vapor deposition with thermal activation from parent organosilicon compounds in mixtures with helium, ammonia, nitrogen, or oxygen at a reduced pressure and temperatures of 373-1023 K. The parent substances used are aminosilane- and silazane-series organosilicon precursors.

引用

页码：273 / 281

页数：9

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