Magnetoresistance in Co/Pt based magnetic tunnel junctions with out-of-plane magnetization

被引：27

作者：

Ducruet, C. ^{[1
]}

Carvello, B. ^{[1
]}

Rodmacq, B. ^{[1
]}

Auffret, S. ^{[1
]}

Gaudin, G. ^{[1
]}

Dieny, B. ^{[1
]}

机构：

[1] CNRS, CEA, SPINTEC, F-38054 Grenoble, France

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期

关键词：

D O I：

10.1063/1.2838282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Submicron magnetic tunnel junctions exhibiting perpendicular magnetic anisotropy have been prepared by sputtering. They associate a hard and a soft electrode based on Co/Pt multilayers, separated by an amorphous alumina barrier. The soft electrode is either free or exchange biased by an antiferromagnetic layer. The magnetoresistance ratio reaches 8% at room temperature after patterning junctions with diameter down to 200 nm. The macroscopic magnetic properties were investigated by extraordinary Hall effect and conventional magnetometry measurements. The magnetic moments of both electrodes are out of plane. Two well-separated switching fields allow the realization of well-defined parallel and antiparallel configurations of the magnetizations.

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页数：3

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