共 13 条
[1]
[Anonymous], P IEEE INT EL DEV M
[2]
Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs
[J].
2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS),
2012,
[3]
The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability
[J].
2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,
2010,
:16-25
[6]
Ubiquitous relaxation in BTI stressing - New evaluation and insights
[J].
2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL,
2008,
:20-+
[7]
Kaczer B., 2012, Proc. IEEE Int. Rel. Phys. Symp. IRPS, p5A.2.1