InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure

被引：15
作者：
Nie, Biying [1 ,2 ]
Huang, Jianliang [1 ,2 ]
Zhao, Chengcheng [1 ,2 ]
Huang, Wenjun [1 ,2 ]
Zhang, Yanhua [1 ,2 ]
Cao, Yulian [1 ,2 ]
Ma, Wenquan [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 05期
关键词：
D O I：
10.1063/1.5079923
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on a resonant tunneling diode (RTD) photodetector using type-II InAs/GaSb superlattices with an InAs/AlSb double barrier structure. At 80 K, the maximum response of the detector is at about 4.0 mu m and the 50% cutoff wavelength is 4.8 mu m. The resonant tunneling mechanism is confirmed by observing the negative differential resistance (NDR) phenomenon. The detector is also tested under illumination by a laser with a wavelength of 3.3 mu m. A significant photocurrent and NDR peak shift are observed when changing the laser illumination power. The internal multiplication factor, which means how many excess electrons can be triggered by one absorbed photon, is estimated to be 1.01 x 10(5) at 4.9 V and is 1.90 x 10(3) at 1.4 V. Published under license by AIP Publishing.
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页数：5
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