Design of Cascode Topology based CMOS Power Amplifier for Wireless Applications

被引:0
作者
Indumathi, G. [1 ]
Keerthana, S. [2 ]
机构
[1] Mepco Schlenk Engn Coll, Elect & Commun Engn, Sivakasi, India
[2] Mepco Schlenk Engn Coll, Commun Syst, Sivakasi, India
来源
2014 IEEE INTERNATIONAL CONFERENCE ON COMPUTATIONAL INTELLIGENCE AND COMPUTING RESEARCH (IEEE ICCIC) | 2014年
关键词
Radio Frequency; Power Amplifier; return loss; Power Consumption; source degeneration; Current mirror; LTE;
D O I
暂无
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
An Radio Frequency (RF) Power Amplifier (PA) plays a key role in front end of RF Transmitter. It's role is to convert low power RF Signal into high Power signal so that it can drive the antenna of the transmitter. The PA exhibits certain desirable characteristics such as enormous output Power, reduced heat dissipation, nominal input and output return loss and eminent gain. It is necessary to cut down Power consumption of PA, since PA depletes majority of Power at the transmitter. A two stage cascode topology based 0.18 mu m Complementary Metal Oxide Semiconductor (CMOS) PA with driver and power stages has been designed using Agilent Advanced Design System (ADS 2009) simulation tool. Here PA needs dc power supply of 1.8V and designed to operate at 2.4 GHz. Current mirror biasing is used at both the stages. The circuit uses source degeneration for input matching and tank circuit for output matching. Interstage matching is provided by a capacitor.
引用
收藏
页码:883 / 886
页数:4
相关论文
共 8 条
[1]  
Berglund B, 2006, ERICSSON REV, V83, P92
[2]   A CMOS Envelope Tracking Power Amplifier for LTE Mobile Applications [J].
Ham, Junghyun ;
Jung, Haeryun ;
Kim, Hyungchul ;
Lim, Wonseob ;
Heo, Deukhyoun ;
Yang, Youngoo .
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14 (02) :235-245
[3]   A Review of Watt-Level CMOS RF Power Amplifiers [J].
Johansson, Ted ;
Fritzin, Jonas .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (01) :111-124
[4]   Design of CMOS Power Amplifiers [J].
Niknejad, Ali M. ;
Chowdhury, Debopriyo ;
Chen, Jiashu .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (06) :1784-1796
[5]  
Niotaki K, 2014, RADIOENGINEERING, V23, P338
[6]  
Sahu Shridhar R., 2013, INT J VLSI DESIGN CO, V4, P107
[7]  
Sahu Shridhar R., 2013, INT J VLSI DESIGN CO, V4, P31
[8]  
Thangavelu Thiyagarajan Krishnan Kesavamurthy, 2013, INT J ENG SCI EMERGI, V6, P190