Ferroelectric memory resistive behavior in BaTiO3/Nb doped SrTiO3 heterojunctions

被引：10
作者：
Singh, Pooja [1 ,2 ]
Rout, P. K. [2 ]
Singh, Manju [2 ]
Rakshit, R. K. [1 ,2 ]
Dogra, Anjana [1 ,2 ]
机构：
[1] Acad Sci & Innovat Res AcSIR, CSIR NPL Campus,Dr KS Krishnan Marg, New Delhi 110012, India
[2] CSIR, Natl Phys Lab, Dr KS Krishnan Marg, New Delhi 110012, India
来源：
THIN SOLID FILMS | 2017年 / 643卷
关键词：
Barium titanate; Memory resistor; Schottky emission; Space charge limited conduction; Pulsed laser deposition; TUNNEL-JUNCTIONS; ELECTRORESISTANCE; MEMRISTOR;
D O I：
10.1016/j.tsf.2017.06.024
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present the memristive (memory resistive) behavior in two different pulsed laser deposited BaTiO3/Nb doped SrTiO3 junctions. The first junction is controlled by space charge limited current (SCLC) conduction while the post-annealed junction is dominated by Schottky emission. The latter junction displays better ferroelectric and memristive properties (with an order of magnitude higher OFF/ON resistance ratio) as compared to the former junction with SCLC conduction. We attribute the improved behavior of the latter junction to the reduction of oxygen vacancies due to post-annealing of the film. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：60 / 64
页数：5
相关论文
共 37 条
[1]  
Bao L., 2009, J APPL PHYS, V106, P1
[2]   Optimization of an organic memristor as an adaptive memory element [J].
Berzina, Tatiana ;
Smerieri, Anteo ;
Bernabo, Marco ;
Pucci, Andrea ;
Ruggeri, Giacomo ;
Erokhin, Victor ;
Fontana, M. P. .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
[3]  
Bhadra R, 2009, CHALCOGENIDE LETT, V6, P189
[4]  
Chanthbouala A, 2011, NAT PHYS, V7, P626, DOI [10.1038/nphys1968, 10.1038/NPHYS1968]
[5]  
Chanthbouala A, 2012, NAT MATER, V11, P860, DOI [10.1038/NMAT3415, 10.1038/nmat3415]
[6]  
Chanthbouala A, 2012, NAT NANOTECHNOL, V7, P101, DOI [10.1038/nnano.2011.213, 10.1038/NNANO.2011.213]
[7]   Erasing characteristics of Cu2O metal-insulator-metal resistive switching memory [J].
Chen, A. ;
Haddad, S. ;
Wu, Y. C. ;
Fang, T. N. ;
Kaza, S. ;
Lan, Z. .
APPLIED PHYSICS LETTERS, 2008, 92 (01)
[8]   Ferroelectric memristive effect in BaTiO3 epitaxial thin films [J].
Chen, X. ;
Jia, C. H. ;
Chen, Y. H. ;
Yang, G. ;
Zhang, W. F. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (36)
[9]   Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].
Choi, BJ ;
Jeong, DS ;
Kim, SK ;
Rohde, C ;
Choi, S ;
Oh, JH ;
Kim, HJ ;
Hwang, CS ;
Szot, K ;
Waser, R ;
Reichenberg, B ;
Tiedke, S .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
[10]   MEMRISTOR - MISSING CIRCUIT ELEMENT [J].
CHUA, LO .
IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05) :507-+
1234