Ferroelectric memory resistive behavior in BaTiO3/Nb doped SrTiO3 heterojunctions

被引：9
作者：
Singh, Pooja [1 ,2 ]
Rout, P. K. [2 ]
Singh, Manju [2 ]
Rakshit, R. K. [1 ,2 ]
Dogra, Anjana [1 ,2 ]
机构：
[1] Acad Sci & Innovat Res AcSIR, CSIR NPL Campus,Dr KS Krishnan Marg, New Delhi 110012, India
[2] CSIR, Natl Phys Lab, Dr KS Krishnan Marg, New Delhi 110012, India
来源：
THIN SOLID FILMS | 2017年 / 643卷
关键词：
Barium titanate; Memory resistor; Schottky emission; Space charge limited conduction; Pulsed laser deposition; TUNNEL-JUNCTIONS; ELECTRORESISTANCE; MEMRISTOR;
D O I：
10.1016/j.tsf.2017.06.024
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present the memristive (memory resistive) behavior in two different pulsed laser deposited BaTiO3/Nb doped SrTiO3 junctions. The first junction is controlled by space charge limited current (SCLC) conduction while the post-annealed junction is dominated by Schottky emission. The latter junction displays better ferroelectric and memristive properties (with an order of magnitude higher OFF/ON resistance ratio) as compared to the former junction with SCLC conduction. We attribute the improved behavior of the latter junction to the reduction of oxygen vacancies due to post-annealing of the film. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：60 / 64
页数：5
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