Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method

被引:19
作者
Hong, Young Joon [2 ,3 ]
Kim, Yong-Jin [2 ,3 ]
Jeon, Jong-Myeong [1 ]
Kim, Miyoung [1 ]
Choi, Jun Hee [1 ,4 ]
Baik, Chan Wook [4 ]
Kim, Sun Il [4 ]
Park, Sung Soo [4 ]
Kim, Jong Min [4 ]
Yi, Gyu-Chul [3 ]
机构
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
[2] POSTECH, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea
[3] Seoul Natl Univ, Dept Phys & Astron, Natl Creat Res Initiat, Ctr Semicond Nanorods, Seoul 151747, South Korea
[4] Samsung Adv Inst Technol, Frontier Res Lab, Kiheung 446712, South Korea
关键词
ZNO; PHOTOLUMINESCENCE; EPITAXY; GROWTH;
D O I
10.1088/0957-4484/22/20/205602
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on the fabrication of high-quality GaN on soda-lime glass substrates, heretofore precluded by both the intolerance of soda-lime glass to the high temperatures required for III-nitride growth and the lack of an epitaxial relationship with amorphous glass. The difficulties were circumvented by heteroepitaxial coating of GaN on ZnO nanorods via a local microheating method. Metal-organic chemical vapor deposition of ZnO nanorods and GaN layers using the microheater arrays produced high-quality GaN/ZnO coaxial nanorod heterostructures at only the desired regions on the soda-lime glass substrates. High-resolution transmission electron microscopy examination of the coaxial nanorod heterostructures indicated the formation of an abrupt, semicoherent interface. Photoluminescence and cathodoluminescence spectroscopy was also applied to confirm the high optical quality of the coaxial nanorod heterostructures. Mg-doped GaN/ZnO coaxial nanorod heterostructure arrays, whose GaN shell layers were grown with various different magnesocene flow rates, were further investigated by using photoluminescence spectroscopy for the p-type doping characteristics. The suggested method for fabrication of III-nitrides on glass substrates signifies potentials for low-cost and large-size optoelectronic device applications.
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页数:6
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