Effects of OH radicals on formation of Cu oxide and polishing performance in Cu chemical mechanical polishing

被引：10

作者：

Kang, Min Cheol ^{[1
]}

Nam, Ho-Seong ^{[2
]}

Won, Ho Youn ^{[2
]}

Jeong, Sukhoon ^{[3
]}

Jeong, Haedo ^{[3
]}

Kim, Jae Jeong ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151742, South Korea

[2] Hanwha Chem, Nano Technol Res Div, Ctr Res & Dev, Taejon 305804, South Korea

[3] Pusan Natl Univ, Sch Mech Engn, Pusan 609735, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 02期

关键词：

D O I：

10.1149/1.2817518

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The amount of OH radicals generated varied according to the complexing agent or Cu ion, and the accelerating effect of OH radicals on the rate of Cu oxide formation was found in acidic pH. When Cu (I) ions and oxalic acid were added to H2O2-based slurry, the decreases in etch and removal rates of Cu were observed because more generation of OH radicals resulted in the formation of thicker Cu oxide compared to additive-free slurry. Therefore, proper control of the formation and dissolution of Cu oxide led to an increase in etch and removal rates. (c) 2007 The Electrochemical Society.

引用

页码：H32 / H35

页数：4

共 23 条

[1] The role of glycine in the chemical mechanical planarization of copper [J].

Aksu, S ;

Doyle, FM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (06) :G352-G361

[2] Effects of hydrogen peroxide and alumina on surface characteristics of copper chemical-mechanical polishing in citric acid slurries [J].

Chen, JC ;

Tsai, WT .

MATERIALS CHEMISTRY AND PHYSICS, 2004, 87 (2-3) :387-393

[3] Effects of oxidizing agent and hydrodynamic condition on copper dissolution in chemical mechanical polishing electrolytes [J].

Chen, JC ;

Lin, SR ;

Tsai, WT .

APPLIED SURFACE SCIENCE, 2004, 233 (1-4) :80-90

[4] Catalytic decomposition of hydrogen peroxide by Fe(III) in homogeneous aqueous solution: Mechanism and kinetic modeling [J].

De Laat, J ;

Gallard, H .

ENVIRONMENTAL SCIENCE & TECHNOLOGY, 1999, 33 (16) :2726-2732

[5] Effect of hydrogen peroxide on oxidation of copper in CMP slurries containing glycine and Cu ions [J].

Du, T ;

Vijayakumar, A ;

Desai, V .

ELECTROCHIMICA ACTA, 2004, 49 (25) :4505-4512

[6] Electrochemical characterization of copper chemical mechanical polishing [J].

Du, TB ;

Tamboli, D ;

Desai, V .

MICROELECTRONIC ENGINEERING, 2003, 69 (01) :1-9

[7] The compatibility of copper CMP slurries with CMP requirements [J].

Ein-Eli, Y ;

Abelev, E ;

Rabkin, E ;

Starosvetsky, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (09) :C646-C652

[8] Copper CMP evaluation: planarization issues [J].

Fayolle, M ;

Romagna, F .

MICROELECTRONIC ENGINEERING, 1997, 37-8 (1-4) :135-141

[9] Citric acid as a complexing agent in CMP of copper investigation of surface reactions using impedance spectroscopy [J].

Gorantla, VRK ;

Assiongbon, KA ;

Babu, SV ;

Roy, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (05) :G404-G410

[10] Oxalic acid as a complexing agent in CMP slurries for copper [J].

Gorantla, VRK ;

Babel, A ;

Pandija, S ;

Babua, SV .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005, 8 (05) :G131-G134

← 1 2 3 →