Diameter controlled growth of SWCNTs using Ru as catalyst precursors coupled with atomic hydrogen treatment

被引：13

作者：

Bouanis, F. Z. ^{[1
,2
]}

Florea, I. ^{[2
]}

Bouanis, M. ^{[3
]}

Muller, D. ^{[4
]}

Nyassi, A. ^{[3
]}

Le Normand, F. ^{[4
]}

Pribat, D. ^{[2
,5
]}

机构：

[1] Univ Paris Est, IFSTTAR, Blvd Newton, F-77420 Champs Sur Marne, France

[2] Univ Paris Saclay, Ecole Polytech, UMR CNRS 7647, Lab Phys Interfaces & Thin Films, F-91128 Palaiseau, France

[3] Univ Chouaib Doukkali, Fac Sci, LCCM, BP 20, M-24000 El Jadida, Morocco

[4] Univ Strasbourg, CNRS, ICube Lab Engn Comp Sci & Imagery, 23 Rue Loess, F-67037 Strasbourg, France

[5] Sungkyunkwan Univ, Dept Energy Sci, Suwon, South Korea

来源：

CHEMICAL ENGINEERING JOURNAL | 2018年 / 332卷

关键词：

Single walled carbon nanotubes (SWCNTs); Double hot filament chemical vapor deposition (d-HFCVD); FIB; HR-TEM; Molecular beam epitaxy (MBE); Field effect transistors (FETs); WALLED CARBON NANOTUBES; CHIRALITY; NANOPARTICLES; TEMPERATURE;

D O I：

10.1016/j.cej.2017.09.073

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

In this work, we present a practical approach for controlling single walled carbon nanotubes (SWCNTs) diameter distribution through thin film Ru catalyst, coupled with hydrogen pre-treatment. Uniform and stable Ru nanoclusters were obtained after dewetting the Ru thin films under atomic hydrogen pre-treatment. SWCNTs were synthetized by double hot filament chemical vapor deposition (d-HFCVD) on SiO2/Si substrates at different temperatures. We found that the temperature is an important synthesis parameter that influences the diameter distribution of the final SWCNTs. Statistical analysis of the Raman radial breathing modes evidences the growth of highly enriched semi-conducting SWCNTs (about 90%) with narrow diameter distribution that correlates directly with the catalyst particle size distribution. Electrical measurement results on as-grown SWCNTs show good thin-film transistor characteristics.

引用

页码：92 / 101

页数：10

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