Research on the growth of β-(AlGa)2O3 film and the analysis of electrical characteristics of Ni/Au Schottky contact using Tung's model

被引：8

作者：

Feng, Qian ^{[1
]}

Hu, Zhuangzhuang ^{[1
]}

Feng, Zhaoqing ^{[1
]}

Xing, Xiangyu ^{[1
]}

Zuo, Yan ^{[1
]}

Yan, Guangshuo ^{[1
]}

Lu, Xiaoli ^{[1
]}

Zhang, Chunfu ^{[1
]}

Zhou, Hong ^{[1
]}

Zhang, Jincheng ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Bandgap Semicond Te, Xian 710071, Shaanxi, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 120卷

基金：

中国国家自然科学基金;

关键词：

Aluminum-gallium oxide; Schottky barrier diodes; Inhomogeneous Schottky barrier height; Thermionic emission; TEMPERATURE; DIODES;

D O I：

10.1016/j.spmi.2018.05.032

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Single crystalline beta-(AlGa)(2)O-3 epilayer was grown on beta-Ga2O3 (010) substrate using pulsed laser deposition. By high resolution X-ray diffraction and X-ray photoelectron spectroscopy measurements, the Al composition was determined to be 11%43%, somewhat larger than that of target. In addition, Schottky diodes were fabricated on epitaxial beta-(Al0.11Ga0.89)(2)O-3 film using Ni/Au as the anode contacts and the electrical characteristics were performed in the temperature range from 300 K to 573 K. From the forward I-V curves, the Phi(b) and n were obtained and they are both strongly dependent on the temperature, which was attributed to the inhomogeneous Schottky barrier height distribution. According to the Tung's model, the mean barrier height of 1.38 eV and A* of 46.52 Acm(-2)K(-2) are extracted by the modified Richardson plot.

引用

页码：441 / 447

页数：7

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