ZnxCd1-xS thin films: A study towards its application as a reliable photodetector

被引:9
|
作者
Barman, Biswajit [1 ]
Bangera, Kasturi V. [1 ]
Shivakumar, G. K. [2 ]
机构
[1] Natl Inst Technol Karnataka, Thin Film Lab, Dept Phys, Mangalore 575025, India
[2] Nitte Mahalinga Adyanthaya Mem Inst Technol, Dept Phys, Nitte 574110, India
关键词
Photodetector; ZnxCd1-xS thin films; Vacuum thermal evaporation; Reproducibility; Photosensitivity; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; SPRAY-PYROLYSIS; GROWTH;
D O I
10.1016/j.spmi.2019.106349
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A reliable and stable photodetector shows enormous potential applications in health monitoring, intelligent wearable devices, and biological sensing. The noble opto-electrical properties of cadmium sulfide (CdS) makes it a favorable semiconductor for opto-electrical devices. The properties of CdS thin film can further be enhanced by alloying it with zinc sulfide (ZnS) to form ZnxCd1-xS compound semiconductor. Herein, a high performance, ZnxCd1-xS (x = 0, 0.15, 0.30, and 0.45) photodetector with good stability is designed and fabricated via a simple vacuum thermal evaporation technique. The various photodetector parameters of the ZnxCd1-xS films were investigated as a function of its composition. Among the various compositions of the ZnxCd1-xS thin films, the Zn0.15Cd0.85S films displayed excellent photosensitivity as high as 2.22 which is similar to 1.6 times higher than that of undoped CdS thin films. The research data suggests that a high-performance single layer ZnxCd1-xS photodetector with good stability and reproducibility can be fabricated using a thermal evaporation technique.
引用
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页数:7
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