Effect of lanthanides-substituted on ferroelectric properties of bismuth titanate thin films prepared by metalorganic decomposition

被引：18

作者：

Kim, KT ^{[1
]}

Kim, CI ^{[1
]}

机构：

[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 118卷 / 1-3期

关键词：

ferroelectric properties; dielectric properties; ionic radius; lanthanides substitutions;

D O I：

10.1016/j.mseb.2004.12.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of lanthanides (A= La, Eu, Ce, Dy, Yb)- substitution on the ferroelectric properties of bismuth titanate (Bi(3.25)A(0.75)Ti(3)O(12), BAT) thin films has been investigated. The structure and morphology of the films were analyzed using X-ray diffraction and scanning electron microscopy, respectively. After annealing at 700 degrees C, the BAT films exhibited a polycrystalline structure. As a increasing the ionic radius of the lanthanides element (Eu, Ce) with a smaller ionic radius than La in the pseudoperovskite layer, the BAT thin films showed well saturated P-E curves and the remanent polarization (2P(r)) values increased from 8.08 and 44 mu C/cm(2) at an applied voltage of 10 V. The BAT thin films exhibited no significant degradation of switching charge at least up to 5 x 10(9) switching cycles at a frequency of 100 kHz. Moreover, the BAT film capacitors have appeared good retention properties after 3 x 10(4) s at room temperature. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：229 / 233

页数：5

共 20 条

[1] Role of growth conditions and Bi-content on the properties of SrBi2Ta2O9 thin films [J].

Bhattacharyya, S ;

James, AR ;

Krupanidhi, SB .

SOLID STATE COMMUNICATIONS, 1998, 108 (10) :759-763

[2] FERROELECTRICS FOR NONVOLATILE RAMS [J].

BONDURANT, D ;

GNADINGER, F .

IEEE SPECTRUM, 1989, 26 (07) :30-33

[3] Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations [J].

Chon, U ;

Kim, KB ;

Jang, HM ;

Yi, GC .

APPLIED PHYSICS LETTERS, 2001, 79 (19) :3137-3139

[4]

Desu S. B., 1993, Integrated Ferroelectrics, V3, P365, DOI 10.1080/10584589308216692

[5] Why lanthanum-substituted bismuth titanate becomes fatigue free in a ferroelectric capacitor with platinum electrodes [J].

Ding, Y ;

Liu, JS ;

Qin, HX ;

Zhu, JS ;

Wang, YN .

APPLIED PHYSICS LETTERS, 2001, 78 (26) :4175-4177

[6] AN EXPERIMENTAL 512-BIT NONVOLATILE MEMORY WITH FERROELECTRIC STORAGE CELL [J].

EVANS, JT ;

WOMACK, R .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (05) :1171-1175

[7] STRUCTURAL AND ELECTRICAL STUDIES ON RAPID THERMALLY PROCESSED FERROELECTRIC BI4TI3O12 THIN-FILMS BY METALLOORGANIC SOLUTION DEPOSITION [J].

JOSHI, PC ;

KRUPANIDHI, SB .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (12) :5827-5833

[8]

Kim K, 1999, INTEGR FERROELECTR, V25, P489

[9] Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition [J].

Kojima, T ;

Sakai, T ;

Watanabe, T ;

Funakubo, H ;

Saito, K ;

Osada, M .

APPLIED PHYSICS LETTERS, 2002, 80 (15) :2746-2748

[10] Ba0.5Sr0.5TiO3 thin films deposited by PLD on SiO2/Si RuO2/Si and Pt/Si electrodes [J].

López, LL ;

Portelles, J ;

Siqueiros, JM ;

Hirata, GA ;

McKittrick, J .

THIN SOLID FILMS, 2000, 373 (1-2) :49-52

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