Fabrication and transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy

被引：9

作者：

Kumakura, K ^{[1
]}

Motohisa, J ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 060, Japan

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

基金：

日本学术振兴会;

关键词：

selective area MOVPE; quantum dot; quantum wire transistor; single electron transistor; Coulomb blockade;

D O I：

10.1016/S1386-9477(98)00165-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaAs wire transistors and single electron transistors (SETs) were successfully fabricated using GaAs/AlGaAs modulation doped structures grown by selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (001) masked GaAs substrates. The results of magnetoresistance of wire transistors applying the negative gate bias show the one-dimensional transport. In SETs, near the pinch-off voltage, Coulomb blockade type conductance oscillations were observed up to 65 K. Coulomb gap and total capacitance CZ were estimated to be 12 mV and 13 aF, respectively. Fabrication process and transport properties of the devices were described. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：809 / 814

页数：6

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