The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

被引：57
作者：
Ji, Kwang Hwan [1 ]
Kim, Ji-In [1 ]
Jung, Hong Yoon [1 ]
Park, Se Yeob [1 ]
Mo, Yeon-Gon [2 ]
Jeong, Jong Han [2 ]
Kwon, Jang-Yeon [3 ]
Ryu, Myung-Kwan [3 ]
Lee, Sang Yoon [3 ]
Choi, Rino [1 ]
Jeong, Jae Kyeong [1 ]
机构：
[1] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea
[2] Samsung Mobile Display Co, Ctr Res & Dev, Yongin 446711, Gyeonggi, South Korea
[3] Samsung Adv Inst Technol, Display Lab, Yongin 446711, Gyeonggi, South Korea
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 11期
关键词：
FIELD-EFFECT MEASUREMENTS; MEYER-NELDEL RULE; CONDUCTIVITY; PREFACTOR;
D O I：
10.1149/1.3483787
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The impact of a gate insulator (GI) material on the device instability of InGaZnO (IGZO) thin film transistors (TFTs) was investigated. The IGZO TFTs with SiO2 GI showed consistently better stability against the applied temperature stress and positive/negative gate bias stress than their counterparts with SiNx GI. This superior stability of the SiO2-gated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities. Based on the Meyer-Neldel rule, the total DOS energy distribution for both devices was extracted and compared, which can explain the experimental observation. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3483787] All rights reserved.
引用
收藏
页码：H983 / H986
页数：4
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