An Ultra Compact Watt-Level Ka-Band Stacked-FET Power Amplifier

被引：40

作者：

Nguyen, Duy P. ^{[1
]}

Anh-Vu Pham ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2016年 / 26卷 / 07期

关键词：

Gallium Arsenide; Ka-band; MMIC; power amplifer; stacked-FET;

D O I：

10.1109/LMWC.2016.2574831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultra-compact watt-level Ka-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) is demonstrated using a 0.15 mu m Gallium Arsenide (GaAs) stacked field effect transistor (stacked-FETs) configuration. The fabricated PA exhibits 31.5 dBm output power, 17 dB gain and 33% power added efficiency (PAE). The bandwidth is from 26 GHz to 31 GHz. The PA achieves 0.7 Watt/mm(2) power density at 28 GHz. To the best of our knowledge, this PA achieves the highest power density among reported GaAs Ka-band PAs.

引用

页码：516 / 518

页数：3

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