Prediction of the field radiated at one meter from PCB's and microprocessors from near EM field cartography

被引：19

作者：

de Daran, F ^{[1
]}

Chollet-Ricard, J ^{[1
]}

Lafon, F ^{[1
]}

Maurice, O ^{[1
]}

机构：

[1] VALEO Elect & Connect Syst, Creteil, France

来源：

2003 IEEE International Symposium on Electromagnetic Compatibility (EMC), Vols 1 and 2, Symposium Record | 2003年

关键词：

EMC; component chip; scan; EM mapping; radiated emission model;

D O I：

10.1109/ICSMC2.2003.1428296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper shows a near field scanning method to characterize chips that leads to the prediction of the coupling phenomena on the electronic board and to the evaluation of the radiated emission at one meter. A theoretical model is first given for simple circuits. An estimation of the scalar and vector potentials is found with the EM scan. Using these results we calculate the near and far emissions. Comparisons with experimental results are given. As conclusion we propose a simple model describing chip radiated emission and we show a real case use.

引用

页码：479 / 482

页数：4