Extreme dielectric strength in boron doped homoepitaxial diamond

被引：138

作者：

Volpe, Pierre-Nicolas ^{[1
,2
]}

Muret, Pierre ^{[1
,2
]}

Pernot, Julien ^{[1
,2
]}

Omnes, Franck ^{[1
,2
]}

Teraji, Tokuyuki ^{[3
]}

Koide, Yasuo ^{[3
]}

Jomard, Francois ^{[4
]}

Planson, Dominique ^{[5
]}

Brosselard, Pierre ^{[5
]}

Dheilly, Nicolas ^{[5
]}

Vergne, Bertrand ^{[6
]}

Scharnholz, Sigo ^{[6
]}

机构：

[1] CNRS, Inst Neel, F-38042 Grenoble 9, France

[2] Univ Grenoble 1, F-38042 Grenoble 9, France

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[4] GEMaC, F-92195 Meudon, France

[5] AMPERE UCBL INSA, F-69621 Villeurbanne, France

[6] French German Res Inst St Louis, ISL, F-68301 St Louis, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 22期

关键词：

SCHOTTKY-BARRIER DIODES; VOLTAGE; FABRICATION; BREAKDOWN;

D O I：

10.1063/1.3520140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below 10(16) cm(-3) in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3520140]

引用

页数：3

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