Gate-Tunable Spatial Modulation of Localized Plasmon Resonances

被引：22

作者：

Arcangeli, Andrea ^{[1
,2
,6
]}

Rossella, Francesco ^{[1
,2
]}

Tomadin, Andrea ^{[1
,2
]}

Xu, Jihua ^{[1
,2
]}

Ercolani, Daniele ^{[1
,2
]}

Sorba, Lucia ^{[1
,2
]}

Beltram, Fabio ^{[1
,2
]}

Tredicucci, Alessandro ^{[1
,2
,3
]}

Polini, Marco ^{[4
,5
]}

Roddaro, Stefano ^{[1
,2
]}

机构：

[1] Scuola Normale Super Pisa, NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy

[2] CNR, Ist Nanosci, Piazza San Silvestro 12, I-56127 Pisa, Italy

[3] Univ Pisa, Dipartimento Fis, Largo Pontecorvo 3, I-56127 Pisa, Italy

[4] Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy

[5] Scuola Normale Super Pisa, NEST, Piazza Cavalieri 7, I-56126 Pisa, Italy

[6] Datal Automat Srl, Via Lavino 265, I-40050 Bologna, Italy

来源：

NANO LETTERS | 2016年 / 16卷 / 09期

关键词：

Plasmonics; field-effect; near-field optical microscopy; semiconductor nanowire; doping engineering; sensors; FIELD-EFFECT TRANSISTORS; GRAPHENE PLASMONS; MICROSCOPY;

D O I：

10.1021/acs.nanolett.6b02351

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate localization and field-effect spatial control of the plasmon resonance in semiconductor nanostructures, using scattering-type scanning near-field optical microscopy in, the mid-infrared region. We adopt InAs nano-Wires embedding a graded doping profile to modulate the free carrier density along the axial direction. Our near-field measurements have a spatial resolution of 20 nm and demonstrate the presence of a local resonant feature whose position can be controlled by a back-gate bias voltage. In the present implementation, field-effect induces a modulation of the free carrier density profile yielding a spatial shift of the plasmon resonance of the order of 100 nm. We discuss the relevance of our electrically tunable nanoplasmonic architectures in view of innovative optoelectronic devices concepts.

引用

页码：5688 / 5693

页数：6

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