Raman and emission characteristics of a-plane InGaN/GaN blue-green light emitting diodes on r-sapphire substrates

被引：11

作者：

Dong, Yanqun ^{[1
]}

Song, Jae-Ho ^{[1
]}

Kim, Ho-Jong ^{[1
]}

Kim, Tae-Soo ^{[1
]}

Ahn, Byung-Jun ^{[1
]}

Song, Jung-Hoon ^{[1
]}

Cho, In-Sung ^{[2
]}

Im, Won-Taek ^{[2
]}

Moon, Youngboo ^{[2
]}

Hwang, Sung-Min ^{[3
]}

Hong, Soon-Ku ^{[4
]}

Lee, Seog-Woo ^{[5
]}

机构：

[1] Kongju Natl Univ, Dept Phys, Kong Ju 314701, Chungnam, South Korea

[2] THELEDS Co Ltd, Yongin 449871, Gyeonggi, South Korea

[3] Korea Elect Technol Inst, Gyeonggi 463816, South Korea

[4] Chungnam Natl Univ, Dept Adv Mat Engn, Taejon 305764, South Korea

[5] Wavesquare Inc, Yongin 449863, Gyeonggi, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 04期

关键词：

QUANTUM-WELLS; GAN; STRAIN; FILMS;

D O I：

10.1063/1.3549160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman and emission properties of a nonpolar a-plane InGaN/GaN blue-green light emitting diode (LED) on an r-sapphire substrate are investigated and compared with a conventional c-plane blue-green LED. The output power of the a-plane LED was 1.4 mW at 20 mA. The c-plane LED has higher EQE, but it reaches the maximum at a lower forward current and the droop is faster than the a-plane counterpart. As the reverse bias increased, a blueshift in the PL spectra was not observed in the a-plane structure, which is indicative of an absence of quantum confined Stark effects. However, a strong blueshift in the electroluminescence spectra was still present, which means the In localization effects are relevant in nonpolar InGaN/GaN quantum wells. In the Raman spectra, a strong anisotropy of E-2(high) phonon modes was observed. By comparing the frequency of the E-2(high) modes, we demonstrate that the residual compressive strain in an a-plane LED is significantly smaller than in the polar counterpart. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3549160]

引用

页数：4

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