Active-oxidation of Si as the source of vapor-phase reactants in the growth of SiOx nanowires on Si

被引：35

作者：

Kim, T. -H. ^{[1
]}

Shalav, A. ^{[1
]}

Elliman, R. G. ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 07期

关键词：

VOLTAMMETRIC DETECTION; SILICA NANOWIRES; ATOMIC OXYGEN; CO OXIDATION; MECHANISM; SI(111); DECOMPOSITION; PRESSURE; SI(100); SURFACE;

D O I：

10.1063/1.3488882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gold-coated silicon wafers were annealed at temperatures in the range from 800-1100 degrees C in a N-2 ambient containing a low (3-10 ppm) residual O-2 concentration. A dense network of amorphous silica nanowires was only observed on samples annealed at temperatures above 1000 degrees C and was correlated with the development of faceted etch-pits in the Si surface. Comparison with known thermodynamic data for the oxidation of Si and vapor-pressures of reactants shows that nanowire growth is mediated by a vapor-liquid-solid mechanism in which the dominant vapor-phase source of reactants is SiO produced by the active oxidation of Si. (C) 2010 American Institute of Physics. [doi:10.1063/1.3488882]

引用

页数：3

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