Hydrogen structures in heavily hydrogenated crystalline and amorphous silicon

被引：7

作者：

Jackson, WB ^{[1
]}

Franz, A ^{[1
]}

Chabal, Y ^{[1
]}

Weldon, MK ^{[1
]}

Jin, HC ^{[1
]}

Abelson, JR ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

HYDROGEN IN SEMICONDUCTORS AND METALS | 1998年 / 513卷

关键词：

D O I：

10.1557/PROC-513-381

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The hydrogen binding energy distribution and IR spectra of hydrogen platelets in c-Si have been measured and compared to H in other forms of silicon including hydrogenated polycrystalline and amorphous Si. The binding distribution for platelet containing samples, determined using H evolution, exhibits two peaks: a bulk peak at 1.8-1.9 eV below the transport barrier, and a second possibly surface related peak 1.8-1.9 eV below the surface evolution barrier. The bulk peak grows at 250C and is consistent with calculated energies for platelet structures. The same two evolution peaks are found in hydrogenated polycrystalline Si and amorphous silicon. The IR spectra for heavily hydrogenated c-Si are dominated by the stretching modes at 2076 and 2128 cm(-1). Most surprisingly there appears to be a strong mode at 856 cm(-1) which is associated with a deformation mode of SiH3. Even more surprising, this SiH3 856 cml mode remains until 550 C indicating that the SiH3 containing structures are rather stable.

引用

页码：381 / 386

页数：6