Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics

被引:6
作者
Chen, H. -Y. [1 ]
Huang, Y. -R. [2 ]
Shih, H. -Y. [3 ]
Chen, M. -J. [3 ]
Sheu, J. -K. [4 ,5 ]
Sun, C. -K. [1 ,2 ,6 ,7 ]
机构
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Mol Imaging Ctr, Taipei 10617, Taiwan
[3] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan
[4] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan
[5] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[6] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
[7] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
关键词
MECHANICAL-PROPERTIES; EPITAXIAL-GROWTH; GALLIUM NITRIDE; CARBON-FILMS; DEPOSITION; SI; TEMPERATURE; CONSTANTS; GAN; GENERATION;
D O I
10.1063/1.4999369
中图分类号
O59 [应用物理学];
学科分类号
摘要
Modern devices adopting denser designs and complex 3D structures have created much more interfaces than before, where atomically thin interfacial layers could form. However, fundamental information such as the elastic property of the interfacial layers is hard to measure. The elastic property of the interfacial layer is of great importance in both thermal management and nano-engineering of modern devices. Appropriate techniques to probe the elastic properties of interfacial layers as thin as only several atoms are thus critically needed. In this work, we demonstrated the feasibility of utilizing the time-resolved femtosecond acoustics technique to extract the elastic properties and mass density of a 1.85-nm-thick interfacial layer, with the aid of transmission electron microscopy. We believe that this femtosecond acoustics approach will provide a strategy to measure the absolute elastic properties of atomically thin interfacial layers. Published by AIP Publishing.
引用
收藏
页数:5
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