108 GHz dynamic frequency divider in 100 nm metamorphic enhancement HEMT technology

被引：8

作者：

Kappeler, O ^{[1
]}

Leuther, A ^{[1
]}

Benz, W ^{[1
]}

Schlechtweg, A ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 13期

关键词：

D O I：

10.1049/el:20030633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on a 100 nm metamorphic HEMT process with 220 GHz transit frequency f(T) an optimised dynamic 2:1 frequency divider has been designed. A consequently implemented symmetrical design and optimised three-metal interconnect technology with BCB dielectric layer results in a very small core size which leads to a maximum operation frequency of 108 GHz.

引用

页码：989 / 990

页数：2

共 6 条

[1] 58-82 GHz 4:1 dynamic frequency divider using 100 nm metamorphic enhancement HEMT technology [J].

Lang, M ;

Leuther, A ;

Benz, W ;

Raynor, B ;

Schlechtweg, M .

ELECTRONICS LETTERS, 2002, 38 (08) :367-368

[2] 75 GHz ECL static frequency divider using InAlAs/InGaAs HBTs [J].

Mathew, T ;

Kim, HJ ;

Scott, D ;

Jaganathan, S ;

Krishnan, S ;

Wei, Y ;

Urteaga, M ;

Long, S ;

Rodwell, MJW .

ELECTRONICS LETTERS, 2001, 37 (11) :667-668

[3] 74GHz dynamic frequency divider using InAlAs/InGaAs/InP HEMTs [J].

Murata, K ;

Yamane, Y .

ELECTRONICS LETTERS, 1999, 35 (23) :2024-2025

[4]

Nakamura T, 2000, FUJITSU SCI TECH J, V36, P1

[5] 100 GHz dynamic frequency divider in SiGe bipolar technology [J].

Rylyakov, A ;

Klapproth, L ;

Jagannathan, B ;

Freeman, G .

ELECTRONICS LETTERS, 2003, 39 (02) :217-218

[6]

TSUNASHIMA S, 2002, 14 IND PHOSPH REL MA

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