High-efficiency nitride-based light-emitting diodes with moth-eye structure

被引：37

作者：

Kasugai, H

Miyake, Y

Honshio, A

Mishima, S

Kawashima, T

Iida, K

Iwaya, M

Kamiyama, S

Amano, H

Akasaki, I

Kinoshita, H

Shiomi, H

机构：

[1] Meijo Univ, 21st Century COE Program Nanofactory, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] SiXON Ltd, Ukyo Ku, Kyoto 6158686, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 10期

关键词：

GaN; SiC substrate; LED; moth-eye structure; light extraction efficiency;

D O I：

10.1143/JJAP.44.7414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitride-based blue light-emitting diodes (LEDs) with a moth-eye structure on the back of a 6H-SiC substrate have been developed. The moth-eye LED has a roughness less than the optical wavelength at the back surface of the SiC substrate fabricated by reactive ion etching (RIE) with CF(4) gas. The light extraction efficiency and corresponding output power have been increased to 3.8 times those of a LED with a conventional structure. The experimental findings agree with the results of a theoretical analysis of the effect of the moth-eye structure.

引用

页码：7414 / 7417

页数：4

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