Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

被引：2

作者：

Gao, F ^{[1
]}

Lin, YX ^{[1
]}

Huang, DD ^{[1
]}

Li, JP ^{[1
]}

Sun, DZ ^{[1
]}

Kong, MY ^{[1
]}

Zeng, YP ^{[1
]}

Li, JM ^{[1
]}

Lin, LY ^{[1
]}

机构：

[1] Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 10083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

annealing; molecular beam epitaxy; germanium silicon alloys; semiconducting materials;

D O I：

10.1016/S0022-0248(01)00823-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：766 / 769

页数：4

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