AlN codoping and fabrication of ZnO homojunction by RF sputtering

被引：16

作者：

Balakrishnan, L. ^{[1
]}

Premchander, P. ^{[2
]}

Balasubramanian, T. ^{[1
]}

Gopalakrishnan, N. ^{[1
]}

机构：

[1] Natl Inst Technol, Dept Phys, Thin Film Lab, Tiruchirappalli 620015, Tamil Nadu, India

[2] Gwangju Inst Sci & Technol, Ctr Informat Technol Educ, Dept Informat & Commun, Kwangju 500712, South Korea

来源：

VACUUM | 2011年 / 85卷 / 09期

关键词：

ZnO; Codoping; Sputtering; Homojunction; Characterization; P-TYPE; FILMS; PHOTOLUMINESCENCE; NITROGEN;

D O I：

10.1016/j.vacuum.2011.01.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ZnO homojunction fabricated from undoped and 1 mol% AlN doped (codoped) ZnO targets by RF magnetron sputtering has been reported. The grown films on Si (100) substrate have been characterized by X-ray diffraction (XRD), Energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Photoluminescence (PL) and Hall measurements. The increase of d-space value (compared with unstressed bulk) found from XRD for AlN codoped ZnO film supports the formation of p-ZnO due to the N incorporation. The presence of N in the film has been confirmed by EDS and XPS analysis. Further, the p-conductivity in AlN codoped ZnO has been evidenced by low temperature PL (donor-acceptor-pair emission) and room temperature PL (red shift in near-band-edge emission). Hall measurement shows that 1 mol% AlN codoped ZnO has the hole concentration of 3.772 x 10(19) cm(-3). The fabricated homojunction with 1% AlN doped ZnO (p-type) and undoped ZnO (n-type) exhibits a typical rectification behavior with high breakdown voltage, and rectification ratio, 13.4. The junction parameters such as ideality factor, barrier height and series resistance have also been calculated for the fabricated p-n junction. The energy band diagram has been proposed for the fabricated homojunction. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：881 / 886

页数：6

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