Effects of Interface Al2O3 Passivation Layer for High-k HfO2 on GaAs

被引：12

作者：

Suh, Dong Chan ^{[1
]}

Cho, Young Dae ^{[1
]}

Ko, Dae-Hong ^{[1
]}

Lee, Yongshik ^{[2
]}

Chung, Kwun Bum ^{[4
]}

Cho, Mann-Ho ^{[3
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

[3] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[4] Dankook Univ, Dept Phys, Cheonan 330714, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 02期

关键词：

D O I：

10.1149/1.3516615

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effects of Al2O3 passivation, formed by atomic layer deposition (ALD) at the interface of HfO2/GaAs, were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage (C-V) measurements. The results indicate that the incorporation of Ga by diffusion into the HfO2 layer is reduced by the Al2O3 passivation at the HfO2/GaAs interface. The Ga and As contents of the HfO2 films decreased with increasing amount of interfacial Al2O3 passivation, while the capacitance value decreased. The Al2O3 phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the C-V electrical properties. (c) 2010 The Electrochemical Society. [DOI: 10.1149/1.3516615] All rights reserved.

引用

页码：H63 / H65

页数：3

共 50 条

[1] Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs
Suh, Dong Chan
Cho, Young Dae
Kim, Sun Wook
Ko, Dae-Hong
Lee, Yongshik
Cho, Mann-Ho
Oh, Jungwoo
APPLIED PHYSICS LETTERS, 2010, 96 (14)
[2] Investigation of the Interface Oxide of Al2O3/HfO2 and HfO2/Al2O3 stacks on GaAs (100) surfaces
Cho, Young Dae
Suh, Dong Chan
Lee, Yongshik
Ko, Dae-Hong
Chung, Kwun Bum
Cho, Mann-Ho
ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2010, 28 (01): : 311 - 314
[3] Study on the Structural Stability and Charge Trapping Properties of High-k HfO2 and HFO2/Al2O3/HfO2 Stacks
Ahn, Young-Soo
Huh, Min-Young
Kang, Hae-Yoon
Sohn, Hyunchul
KOREAN JOURNAL OF METALS AND MATERIALS, 2010, 48 (03): : 256 - 261
[4] Thermal instability of HfO2 on InP structure with ultrathin Al2O3 interface passivation layer
An, Chee-Hong
Byun, Young-Chul
Cho, Mann-Ho
Kim, Hyoungsub
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2012, 6 (06): : 247 - 249
[5] The NH3 nitridation effects on a Al2O3 passivation by atomic layer deposition (ALD) in the HfO2/GaAs systems
Cho, Young Dae
Suh, Dong Chan
Ko, Dae-Hong
Lee, Yongshik
Cho, Mann-Ho
PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9, 2011, 41 (03): : 145 - 148
[6] HfO2/Al2O3 Bilayered High-k Dielectric for Passivation and Gate Insulator in 4H-SiC Devices
Usman, M.
Henkel, C.
Hallen, A.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (08) : N3087 - N3091
[7] Local structural modifications of the HfO2 layer in the Al2O3 capped high-k dielectric films as probed by EXAFS
Sahiner, M. A.
Lysaght, P. S.
Woicik, J. C.
Park, C. S.
Huang, J.
Bersuker, G.
Taylor, W.
Kirsch, P. D.
Jammy, R.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (04): : 679 - 682
[8] Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics
Kim, Hogyoung
Yun, Hee Ju
Choi, Seok
Choi, Byung Joon
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2019, 37 (04):
[9] S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates
Aguirre-Tostado, F. S.
Milojevic, M.
Choi, K. J.
Kim, H. C.
Hinkle, C. L.
Vogel, E. M.
Kim, J.
Yang, T.
Xuan, Y.
Ye, P. D.
Wallace, R. M.
APPLIED PHYSICS LETTERS, 2008, 93 (06)
[10] Al2O3/HfO2 Multilayer High-k Dielectric Stacks for Charge Trapping Flash Memories
Spassov, Dencho
Paskaleva, Albena
Krajewski, Tomasz A.
Guziewicz, Elzbieta
Luka, Grzegorz
Ivanov, Tzvetan
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (16):

← 1 2 3 4 5 →