Electrically erasable metal-oxide-semiconductor dosimeters

被引：25
|
作者：
Lipovetzky, Jose
Redin, Eduardo Gabriel
Faigon, Adrian
机构：
[1] Univ Buenos Aires, Dept Fis, Fac Ingn, Buenos Aires, DF, Argentina
[2] Consejo Nacl Invest Cient & Tecn, RA-1033 Buenos Aires, DF, Argentina
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 04期
关键词：
dosimetry; tunneling; fowler-nordheim; MOS devices; radiation effects;
D O I：
10.1109/TNS.2007.895122
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Metal-oxide-semiconductor (MOS) dosimetry including the reset of the sensor device for its reuse (reutilization) is described. The method consists in restoring the shifted threshold voltage after irradiation to a predefined value by the injection of a Fowler-Nordheim. tunnel current. The amount of interface states per unit area is initially saturated in order to ensure repeatability. The method was tested on 70 nm pMOSFETs exposed to a Co-60 source. After successive irradiations and erasures amounting several tens of kGy[SiO2] the devices exhibit a dispersion smaller than 2% in the responses.
引用
收藏
页码：1244 / 1250
页数：7
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