Reliability Evaluation on Deterioration of Power Device Using Coupled Electrical-Thermal-Mechanical Analysis

被引:7
作者
Anzawa, Takashi [1 ]
Yu, Qiang [1 ]
Yamagiwa, Masanori [1 ,2 ]
Shibutani, Tadahiro [3 ]
Shiratori, Masaki [1 ]
机构
[1] Yokohama Natl Univ, Dept Mech Engn & Mat Sci, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan
[2] Nissan Motor Co Ltd, Nissan Res Ctr, Elect Prop Lab, Kanagawa 2430123, Japan
[3] Yokohama Natl Univ, Dept Safety Management, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan
关键词
cracks; fracture mechanics; insulated gate bipolar transistors; lead bonding; power bipolar transistors; semiconductor device reliability; temperature distribution; thermal analysis; thermal stress cracking; SOLDER JOINTS;
D O I
10.1115/1.4002451
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a simulation method to evaluate the thermal fatigue life of a power module. A coupled electrical-thermal analysis was performed to obtain the nonuniform temperature distribution of electric current. Then, a thermomechanical analysis was carried out based on the temperature distribution from the electrical-thermal analysis. Since crack propagation can change the route of heat transfer, a crack path simulation technique was used to investigate the fracture behavior of the power module. The crack initiates in the solder joint below the Al bonding wire of the insulated gate bipolar transistor module and propagates by increasing the diameter. The effect of the bonding type on power cycling fatigue life is also discussed. The fracture process was found to depend on the type of bonding. Lead frame bonding was found to be more effective than wire bonding. [DOI: 10.1115/1.4002451]
引用
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页数:6
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