Transparent thin-film transistors using ZnMgO as dielectrics and channel

被引：31

作者：

Wu, Huizhen ^{[1
]}

Liang, Jun

Jin, Guofen

Lao, Yanfeng

Xu, Tianning

机构：

[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 11期

基金：

中国国家自然科学基金;

关键词：

high-kappa gate dielectrics; transparent thin-film transistors (TFTs); ZnMgO;

D O I：

10.1109/TED.2007.907126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An enhancement-mode ZnMgO transparent thin-film transistor (TFT) is fabricated, in which cubic-phase ZnMgO (C-ZnMgO) is used as gate insulator and hexagonal-phase ZnMgO (H-ZnMgO) is used as channel. The multilayers of C-ZnMgO and H-ZnMgO are grown on patterned indium-tin-oxide-coated glass in successive fashion at low temperature. Capacitor-voltage characteristics measured across the gate show that the H-ZnMgO channel is n-type. The C-ZnMgO isolating layer demonstrates low leakage current characteristics, i.e., 4 x 10(-7) A/cm(2), at a bias of 10 V. The transparent TFTs display a typical channel mobility of 1.5 cm(2) V-1 s(-1) and an on/off ratio of 10(4).

引用

页码：2856 / 2859

页数：4

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