Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering

被引：41

作者：

Cauduro, Andre L. Fernandes ^{[1
]}

Fabrim, Zacarias E. ^{[2
]}

Ahmadpour, Mehrad ^{[1
]}

Fichtner, Paulo F. P. ^{[2
,3
]}

Hassing, Soren ^{[4
]}

Rubahn, Horst-Gunter ^{[1
]}

Madsen, Morten ^{[1
]}

机构：

[1] Univ Southern Denmark, NanoSYD, DK-6400 Sonderborg, Denmark

[2] Univ Fed Rio Grande do Sul, PPGMicro Grad Program Microelect, BR-91501970 Porto Alegre, RS, Brazil

[3] Univ Fed Rio Grande do Sul, Sch Engn, BR-91501970 Porto Alegre, RS, Brazil

[4] Univ Southern Denmark, Inst Chem Engn Biotechnol & Environm Technol, DK-5230 Odense, Denmark

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 20期

关键词：

MOLYBDENUM OXIDE-FILMS; METAL-OXIDES; THIN-FILMS; LAYER;

D O I：

10.1063/1.4921367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of the reported films by increasing the oxygen partial pressure from 1.00 x 10(-3) mbar to 1.37 x 10(-3) mbar during the sputtering process. A strong impact on the electrical conductivity, varying from 1.6 x 10(-5) S/cm to 3.22 S/cm, and on the absorption coefficient in the range of 0.6-3.0 eV is observed for the nearly stoichiometric MoO3.00 and for the sub-stoichiometric MoO2.57 films, respectively, without modifying significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generating a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic properties in these films holds strong promise for their implementation in optoelectronic devices. (C) 2015 AIP Publishing LLC.

引用

页数：5

共 27 条

[1] Epitaxial growth and properties of MoOx(2<x<2.75) films -: art. no. 083539 [J].